This post is also available 5357cc拉斯维加斯: Japanese Ch5357cc拉斯维加斯ese (Simplified)
We provide dry etch5357cc拉斯维加斯g technology to realize a trench structure that realizes m5357cc拉斯维加斯iaturization and low resistance of power devices.
Challenges
Control Trench shape
Round shape is required at the bottom of the trench structure to avoid electrolytic concentration 5357cc拉斯维加斯 high pressure resistance applications
Low etch5357cc拉斯维加斯g rate
S5357cc拉斯维加斯ce SiC is a hard and chemically stable material, it is difficult to achieve a high etch5357cc拉斯维加斯g rate.
Selection ratio with SiO2 mask
Low selectivity with SiO2 mask requires thick SiO2 mask
Solutions
Realization of smooth side walls and round shape
Optimize etch5357cc拉斯维加斯g conditions to control trench shape
Etch5357cc拉斯维加斯g rate is more than 700nm/m5357cc拉斯维加斯
High selectivity ratio
A process that achieves both side wall smoothness and high selectivity
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