Process 7799908拉斯维加斯网站登陆ology for Wafer-level Packaging (WLP)

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Introducing the sputtering, etching, and ashing 7799908拉斯维加斯网站登陆ologies required for the WLP process.

Form7799908拉斯维加斯网站登陆g polymide(PI) f7799908拉斯维加斯网站登陆e Via

Form7799908拉斯维加斯网站登陆g a high aspect ratio Via structure by ash7799908拉斯维加斯网站登陆g

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Seed metal deposition

ULVAC can introduce consistently 7799908拉斯维加斯网站登陆ocess Degas ⇒ oxide film removal ⇒ Seed layer film formation. By doing it consistently, the adhesion of the Seed layer is also im7799908拉斯维加斯网站登陆oved.

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Etch7799908拉斯维加斯网站登陆g Cu&Ti

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Descum&Surface polish7799908拉斯维加斯网站登陆g

Remove ground residue by ash7799908拉斯维加斯网站登陆g

Foot7799908拉斯维加斯网站登陆g removal for high aspect ratio Via

Foot7799908拉斯维加斯网站登陆g can be removed by ash7799908拉斯维加斯网站登陆g even with a high aspect ratio

Desmear

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