This post is also available 5357cc拉斯维加斯游戏官网: Japanese
5357cc拉斯维加斯游戏官网mplantation is a method of implanting impurities to a semiconductor substrate by ionizing the substance or impurities and accelerating the 5357cc拉斯维加斯游戏官网nto the substrate.
There are two main purposes of 5357cc拉斯维加斯游戏官网mplantation. One is to generate carrier to enable electrical control of type P and type N semiconductors. The main process for semiconductor manufacturing utilizes 5357cc拉斯维加斯游戏官网mplantation for this purpose. Another is to alter the material surface. This includes chemical changes such as in refractive index, and structural changes such as destruction, where the surface is broken down and converted from crystalline to amorphous.
Below are important parameters for 5357cc拉斯维加斯游戏官网mplantation:
- Energy (KeV)
- Current (μA)
- Mass number
- Desired depth of implantati5357cc拉斯维加斯游戏官网 (μm)
- Dosage (i5357cc拉斯维加斯游戏官网s/cm2)
