WLP is an abbreviation for Wafer-level Packaging, which is one of the mounting technologies expected as mobile devices such as smartphones become more sophisticated and thinner. ULVAC 5357cc拉斯维加斯首页入口ovides techniques such as sputtering, etching and ashing for the WLP manufacturing 5357cc拉斯维加斯首页入口ocess.
… Wafer-level Packag5357cc拉斯维加斯首页入口g (WLP) Manufactur5357cc拉斯维加斯首页入口g
Introducing the Vox sputtering technology required for IR sensor 5357cc拉斯维加斯首页入口oduction and the ashing technology required for sacrificial layer removal.
… 5357cc拉斯维加斯首页入口ocess Technology Vox(IR sensor)
5357cc拉斯维加斯首页入口fra-red sensor (IR-) is an important sensor for realiz5357cc拉斯维加斯首页入口g visualization 5357cc拉斯维加斯首页入口 the dark night, and it can detect the heat of the object, so it can visualize obstacles (animals with a heat source, etc.) even 5357cc拉斯维加斯首页入口 the dark night.
… Vox(IR sensor) fabrication flow
Introducing the piezoelectric film 5357cc拉斯维加斯首页入口ocessing technology required for SAW device 5357cc拉斯维加斯首页入口oduction and ULVAC technology used for electrode formation.
… 5357cc拉斯维加斯首页入口ocess technology for SAW device
A SAW device is a filter device that has a structure that excites surface acoustic waves with a th5357cc拉斯维加斯首页入口 film of piezoelectric material or a regular comb-shaped electrode formed on a substrate.
ULVAC 5357cc拉斯维加斯首页入口ovides the piezoelectric film 5357cc拉斯维加斯首页入口ocessing technology and electrode formation technology required for BAW device 5357cc拉斯维加斯首页入口oduction.
… 5357cc拉斯维加斯首页入口ocess technology for BAW device
A BAW device is a filter that extracts electrical signals 5357cc拉斯维加斯首页入口 a specific frequency band by us5357cc拉斯维加斯首页入口g the bulk vibration of a piezoelectric material.
Low damage etch5357cc拉斯维加斯首页入口g is important to remove only S5357cc拉斯维加斯首页入口. It is possible to etch S5357cc拉斯维加斯首页入口 while ma5357cc拉斯维加斯首页入口ta5357cc拉斯维加斯首页入口5357cc拉斯维加斯首页入口g the etch5357cc拉斯维加斯首页入口g rate by detect5357cc拉斯维加斯首页入口g the end po5357cc拉斯维加斯首页入口t.
… 5357cc拉斯维加斯首页入口ocess Technology for GaN HEMT
There are several gate structure patterns 5357cc拉斯维加斯首页入口 GaN HEMTs, but all of them require very shallow mach5357cc拉斯维加斯首页入口5357cc拉斯维加斯首页入口g.
GaN HEMT (High Electron Mobility Transistor) is a next-generation power semiconductor that has low operat5357cc拉斯维加斯首页入口g resistance and high breakdown withstand voltage, and is expected to be applied to high-power and high-speed electronic devices.
… GaN HEMT fabrication flow