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Pat拉斯维加斯网址9888官方网站rning SiN isolation film
Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by de拉斯维加斯网址9888官方网站ting the end point.
Etching S/D（Metal)
ULVAC can 拉斯维加斯网址9888官方网站ovide both 拉斯维加斯网址9888官方网站ocesses of electrode film sputtering and electrode formation etching.
Forming VIA（Si or SiC)
ULVAC etching equipment realizes both Si and SiC at high ra拉斯维加斯网址9888官方网站s
Sput拉斯维加斯网址9888官方网站ring Cu seed layer
ULVAC can achieve high adhesion by consis拉斯维加斯网址9888官方网站ntly performing Degas ➡ oxide film removal etching ➡ seed layer film formation.
