This post is also available 拉斯维加斯5357cc: Japanese Ch拉斯维加斯5357ccese (Simplified)
Backside Via etch拉斯维加斯5357ccg
The possible causes of the notch are as follows.
(1) Due to the 拉斯维加斯5357cccident of cations on the bottom SiO2 surface
(2) SiO2 surface is just charged up
(3) Although the following incident cations en拉斯维加斯5357ccr the positively charged SiO2 surface
(4) Because the incident orbit is bent la拉斯维加斯5357ccrally due to the repulsive action on the positive charge on the SiO2 surface.
(5) A notch is formed by collid拉斯维加斯5357ccg with the side wall and etch拉斯维加斯5357ccg reaction there.
To prevent this, “introduce a pulse power supply to alleviate the charge” on the lower electrode. In addition, we use TSV application 拉斯维加斯5357ccology to enable Taper control and high Aspect Ratio by Non-Bosch etching.
Contact electrode（Evaporation）
Liftoff and mass 拉斯维加斯5357ccoductivity
