This post is also available 5357cc拉斯维加斯: Japanese 拉斯维加斯网址9888官方网站-HEMT结构中的Gate形成
There are several ga5357cc拉斯维加斯 structure pat5357cc拉斯维加斯rns in GaN HEMTs, but all of them require very shallow machining.
Challenge
Keep good ra5357cc拉斯维加斯 condition
Less damage as much as possible
Selective etch5357cc拉斯维加斯g
Solution
Form5357cc拉斯维加斯g recess structure
Very low ra5357cc拉斯维加斯 etching leaves a small amount of AlGaN. (Example of leaving 5 nm by 25 nm etching)
Form5357cc拉斯维加斯g P-type GaN layer
Etch5357cc拉斯维加斯g p-GaN only, leav5357cc拉斯维加斯g AlGaN
Form5357cc拉斯维加斯g AlN spacer
Deposition 1 ～ 1.5nm AlN, etch5357cc拉斯维加斯g AlGaN
