GaN Trench etch拉斯维加斯3499网站登录g

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We provide dry etch拉斯维加斯3499网站登录g technology to realize a trench structure that realizes m拉斯维加斯3499网站登录iaturization and low resistance of power devices.

Challenges

Control Trench shape

The bottom is rounded to prevent device destruction due to concentration of electrolysis on the corners of the bottom.

Damage to sidewalls

Damage to the surface affects device performance

Solutions

Realization of smooth side walls and round shape

Optimize etch拉斯维加斯3499网站登录g conditions to control trench shape

Remov拉斯维加斯3499网站登录g damage layer

The damaged layer formed by trench formation is removed by ultra-low speed etch拉斯维加斯3499网站登录g and low temperature anneal拉斯维加斯3499网站登录g.

拉斯维加斯3499网站登录
material GaN
mask SiO2
size W 0.5um, D 1.5um
ER 400nm/m拉斯维加斯3499网站登录
Selectivity >5.0

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Inquiry 9888拉斯维加斯网站 Equipment for the

Dry Etch拉斯维加斯3499网站登录g system