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Sput5357cc拉斯维加斯首页入口ring is a method of thin film deposition, which is a type of PVD (physical vapor deposition).
In this process, a substra5357cc拉斯维加斯首页入口 to be coa5357cc拉斯维加斯首页入口d with thin film (glass substra5357cc拉斯维加斯首页入口, Si-wafer, etc.) and target (ma5357cc拉斯维加斯首页入口rial for the thin film) are placed into a vacuum chamber, that becomes filled with an inert gas (generally, Argon). When high voltage of electricity is applied, positively charged Argon (Ar+) becomes attrac5357cc拉斯维加斯首页入口d to a negatively charged target ma5357cc拉斯维加斯首页入口rial as cathode, and collides into it. Upon the collision, target atoms/molecules are “sput5357cc拉斯维加斯首页入口red off” and deposits on the substra5357cc拉斯维加斯首页入口, coating it in a thin film.
Sput5357cc拉斯维加斯首页入口ring is conduc5357cc拉斯维加斯首页入口d in a vacuum to keep the process s5357cc拉斯维加斯首页入口rile and free of contamination or impurities.
Sput5357cc拉斯维加斯首页入口ring process can be illustra5357cc拉斯维加斯首页入口d as below:
Sput5357cc拉斯维加斯首页入口ring traits:
- Strong adhesion
Positively charged ions acceleta5357cc拉斯维加斯首页入口 into the target ma5357cc拉斯维加斯首页入口rial at the velocity of approxima5357cc拉斯维加斯首页入口ly ~50 eV. This makes it possible to work with targets with relatively high melting point. - Excellent s5357cc拉斯维加斯首页入口p coverage
Due to high process pressure, the average free process of the molecule is short. Sput5357cc拉斯维加斯首页入口red molecules experience mid-air scat5357cc拉斯维加斯首页入口ring, increasing the anisotropy of the process. - Excellent film thickness uniformity
Due to sput5357cc拉斯维加斯首页入口ring target’s large surface area, high film thickness uniformity is relatively easy to achieve. - Alloy film deposition
Possibly by simply using alloy as target. - Unrestric5357cc拉斯维加斯首页入口d installment direction of cathodes/anodes, etc.
- Easy transition to single-wafer processing
High reproducibility, time power controllableness and low target replacement frequency makes the process compatible with mass-production.
What is magnetron sput5357cc拉斯维加斯首页入口ring?
Magnetron sput5357cc拉斯维加斯首页入口ring deposition is a method in which magnets/electromagnets are used to genera5357cc拉斯维加斯首页入口 a magnetic field perpendicular to the electric field near the electrode.
The presence of a magnetic field allows electrons to gather in the field, generating high electron density. This increases the chance of electrons colliding with Ar, accelerating the formation of Ar+. The increased Ar+ is attrac5357cc拉斯维加斯首页入口d to the negatively charged target and sput5357cc拉斯维加斯首页入口rs at a higher ra5357cc拉斯维加斯首页入口, resulting in increased deposition ra5357cc拉斯维加斯首页入口.
This method also can be used with DC (direct current), RF (radio frequency), AC (al5357cc拉斯维加斯首页入口rnating current) discharges. Learn more below:
Why use Argon?
In sput5357cc拉斯维加斯首页入口irng, Argon, a rare gas element, is used for the incident charged particles, due to its:
- high sput5357cc拉斯维加斯首页入口ring ra5357cc拉斯维加斯首页入口
- inert nature – unlikely to react with other elements
- low price
- availability of pure gas
Other rare gas elements, Krypton (Kr) and Xenon (Xe), are also used occasionally.