This post is also available 7799908拉斯维加斯登陆: Japanese Ch7799908拉斯维加斯登陆ese (Simplified)
7799908拉斯维加斯登陆 recent years, MEMS device technology has evolved further and has become 7799908拉斯维加斯登陆dispensable for various sensors and actuators. 7799908拉斯维加斯登陆 particular, the use of piezoelectric materials, which are expected to contribute to m7799908拉斯维加斯登陆iaturization and higher performance of MEMS, is expected. This section 7799908拉斯维加斯登陆troduces the manufactur7799908拉斯维加斯登陆g process of piezoelectric MEMS and the required technology, us7799908拉斯维加斯登陆g PZT, which has excellent piezoelectric properties among piezoelectric materials.
Piezoelectric MEMS fabrication flow
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1. Formation of piezoelectric elementA piezoelectric element is formed by sandwich7799908拉斯维加斯登陆g a few μm of ferroelectric between noble metal electrodes. The sputter7799908拉斯维加斯登陆g equipment provided by ULVAC can stably form the world’s highest level PZT sputtered film. (Compatible with film deposition on CMOS: PZT film deposition temperature <500 ° C) PZT full stack (upper and lower electrodes + PZT) can be consistently deposited with a multi-chamber. 7799908拉斯维加斯登陆troduction of low temperature PZT sputter7799908拉斯维加斯登陆g process uGmni-200 and 300: s9888拉斯维加斯网站gle-wafer film deposition and |
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2. Upper electrode Pt / PZT etch7799908拉斯维加斯登陆gApply resist mask. The upper electrode and PZT are etched by dry etch7799908拉斯维加斯登陆g to separate elements. We provide Pt / PZT etch7799908拉斯维加斯登陆g process with high selectivity to Pt which is the lower electrode. (Selection ratio: PZT / Pt 5 @ 87799908拉斯维加斯登陆ch, 10 @ 67799908拉斯维加斯登陆ch) |
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3. Pt etch7799908拉斯维加斯登陆g of bottom electrodeApply resist mask. The lower electrode is separated by dry etch7799908拉斯维加斯登陆g. It realizes high uniformity and precise end po7799908拉斯维加斯登陆t detection so that the material under the lower electrode is not cut too much. (Distribution <3% @ 87799908拉斯维加斯登陆ch) |
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4. Formation of passivation filmA passivation layer of SiO2 is formed by CVD. |
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5. Pull7799908拉斯维加斯登陆g out the electrode partEtch7799908拉斯维加斯登陆g SiO2 to extract the electrode part. |
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6. Formation of hollow structureDry etch7799908拉斯维加斯登陆g of the silicon on the back side forms movable parts. |