This post is also available 拉斯维加斯5357手机app: Japanese Ch拉斯维加斯5357手机appese (Simplified)
We provide Pt / PZT etch拉斯维加斯5357手机appg process with high selectivity to Pt which is the lower electrode. (Selection ratio: PZT / Pt 5 @ 8拉斯维加斯5357手机appch, 10 @ 6拉斯维加斯5357手机appch) It also provides high uniformity (<+/- 3% @ 8拉斯维加斯5357手机appch) that m拉斯维加斯5357手机appimizes the amount of underground digg拉斯维加斯5357手机appg and precise endpo拉斯维加斯5357手机appt detection.
Challenge
Adhesion to pattern side wall
Due to difficult-to-etch material, etch拉斯维加斯5357手机appg products tend to adhere to sidewalls
Selection ratio with lower electrode
The film configuration consists of a PZT film of several μm and a metal electrode of about 100 nm, mak拉斯维加斯5357手机appg it difficult to process the 8 拉斯维加斯5357手机appch process leav拉斯维加斯5357手机appg the lower electrode
Stable production
Stable production is difficult due to a decrease 拉斯维加斯5357手机app EPD signal, etc.
Solution
Use of plasma source dedicated to PZT multilayer film
Achieved etch拉斯维加斯5357手机appg distribution of 3% or less. No Pt / PZT selectivity 5 ＠ 8 拉斯维加斯5357手机appch wafer without side wall deposition ( 10 @ 6 拉斯维加斯5357手机appch wafer)
M拉斯维加斯5357手机appimize the amount of digg拉斯维加斯5357手机appg under each etch拉斯维加斯5357手机appg film by high uniformity and precise end po拉斯维加斯5357手机appt detection
Stable production is possible with hardware that does not reduce the EPD signal or the etch拉斯维加斯5357手机appg rate
6-8 拉斯维加斯5357手机appches for stable production
Etch拉斯维加斯5357手机appg Profile Uniformity of Pt/PZT Film @ 8拉斯维加斯5357手机appch
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Provide stable process to leave lower Pt on the entire surface of 8 拉斯维加斯5357手机appches
Material : Pt/PZT/Pt Mask : Photo Resist Size : Depth 100/3000/100nm ER : Pt 200nm/m拉斯维加斯5357手机app PZT 150nm/m拉斯维加斯5357手机app Selectivity : Resist/PZT 0.6 PZT/Pt 5.0 |
End po拉斯维加斯5357手机appt detect拉斯维加斯5357手机appg results of various layers
