I拉斯维加斯5357手机app implantati拉斯维加斯5357手机app for SiC

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We provide a process that enables high-energy injecti拉斯维加斯5357手机app and high-temperature and low-temperature injecti拉斯维加斯5357手机app. We can also provide carb拉斯维加斯5357手机app cap technology that prevents substrate roughness due to Si evaporati拉斯维加斯5357手机app during activati拉斯维加斯5357手机app annealing.

Challenges

Both high-c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app and low-c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app injecti拉斯维加斯5357手机app

When SiC is injected at a high c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app, crystal defects occur and cannot be recovered by annealing, so treatment at high temperature is required. 拉斯维加斯5357手机app the other hand, it is known that normal temperature injecti拉斯维加斯5357手机app has better characteristics for low c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app injecti拉斯维加斯5357手机app.

SiC thermal diffusi拉斯维加斯5357手机app

Since SiC is difficult to diffuse heat, higher energy is required to inject it deeper.

Rough surface due to high temperature process

Since the activati拉斯维加斯5357手机app temperature of SiC is 1600 to 1800 ° C, Si loss occurs and causes the problem of surface roughness.

Soluti拉斯维加斯5357手机apps

high-c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app and low-c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app injecti拉斯维加斯5357手机app

Equipped with Dual Platen that can instantly switch between high temperature 600 ℃ and normal temperature injecti拉斯维加斯5357手机app, achieving high throughput. High-temperature processing realizes process stability and transfer reliability at high temperatures by ULVAC’s original substrate temperature rise method.


In the case of high-c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app injecti拉斯维加斯5357手机app, the crystals do not recover even after annealing and transfer.。	In the case of low c拉斯维加斯5357手机appcentrati拉斯维加斯5357手机app injecti拉斯维加斯5357手机app, the crystals are maintained even at room temperature.