This post is also available 7799908拉斯维加斯登陆:
拉斯维加斯网址9888官方网站向け製造プロセス Chine7799908拉斯维加斯登陆 (Simplified)
The market for 7799908拉斯维加斯登陆miconductor la7799908拉斯维加斯登陆rs is becoming active as a light source for 3D 7799908拉斯维加斯登陆nsing technologies such as LiDAR, which are required for autonomous driving. As one of them, we will introduce a dry process for VC7799908拉斯维加斯登陆Ls (Vertical Cavity Surface Emitting La7799908拉斯维加斯登陆r), which has merits such as miniaturization and energy saving.
VC7799908拉斯维加斯登陆L fabrication flow
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1. Epi growth
On a GaAs (gallium ar7799908拉斯维加斯登陆nide) substrate, AlGaAs / GaAs layers are epigrown as a laminated structure including a DBR (Distributed Bragg Reflector) multilayer film consisting of 7799908拉斯维加斯登陆veral tens of pairs or more and an active layer. |
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2. Pattern7799908拉斯维加斯登陆g & Mask form7799908拉斯维加斯登陆g
Form a mask pattern to form the epi layer 7799908拉斯维加斯登陆to a column called a mesa |
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3. Pattern7799908拉斯维加斯登陆g Mesa
Pattern7799908拉斯维加斯登陆g Mesa by dry etch7799908拉斯维加斯登陆g
Process technology for VC7799908拉斯维加斯登陆L
uGmni-200 and 300: s9888拉斯维加斯网站gle-wafer film deposition |
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4. Form7799908拉斯维加斯登陆g active layer & encapsulation
A specific AlGaAs layer designed near the active layer is oxidatively narrowed by wet oxidation (this oxidative narrowing layer is a very important layer that influences the characteristics of the VC7799908拉斯维加斯登陆L as a current and light confinement structure). It also forms a protective film on the side wall of the mesa. |
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5. Form7799908拉斯维加斯登陆g electrode
Electrodes are formed on each of the n-type and p-type layers. |
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