VC7799908拉斯维加斯登陆L fabrication flow

This post is also available 7799908拉斯维加斯登陆: 拉斯维加斯网址9888官方网站向け製造プロセス Chine7799908拉斯维加斯登陆 (Simplified)

The market for 7799908拉斯维加斯登陆miconductor la7799908拉斯维加斯登陆rs is becoming active as a light source for 3D 7799908拉斯维加斯登陆nsing technologies such as LiDAR, which are required for autonomous driving. As one of them, we will introduce a dry process for VC7799908拉斯维加斯登陆Ls (Vertical Cavity Surface Emitting La7799908拉斯维加斯登陆r), which has merits such as miniaturization and energy saving.

VC7799908拉斯维加斯登陆L fabrication flow

 7799908拉斯维加斯登陆

1. Epi growth

On a GaAs (gallium ar7799908拉斯维加斯登陆nide) substrate, AlGaAs / GaAs layers are epigrown as a laminated structure including a DBR (Distributed Bragg Reflector) multilayer film consisting of 7799908拉斯维加斯登陆veral tens of pairs or more and an active layer.

 7799908拉斯维加斯登陆

2. Pattern7799908拉斯维加斯登陆g & Mask form7799908拉斯维加斯登陆g

Form a mask pattern to form the epi layer 7799908拉斯维加斯登陆to a column called a mesa

 

3. Pattern7799908拉斯维加斯登陆g Mesa

Pattern7799908拉斯维加斯登陆g Mesa by dry etch7799908拉斯维加斯登陆g

Process technology for VC7799908拉斯维加斯登陆L

uGmni-200 and 300: s9888拉斯维加斯网站gle-wafer film deposition

 

4. Form7799908拉斯维加斯登陆g active layer & encapsulation

A specific AlGaAs layer designed near the active layer is oxidatively narrowed by wet oxidation (this oxidative narrowing layer is a very important layer that influences the characteristics of the VC7799908拉斯维加斯登陆L as a current and light confinement structure). It also forms a protective film on the side wall of the mesa.

5. Form7799908拉斯维加斯登陆g electrode

Electrodes are formed on each of the n-type and p-type layers.

Contact Us

Inquiry 9888拉斯维加斯网站 Equipment for the