{"id":3841,"date":"2021-01-27T09:16:32","date_gmt":"2021-01-27T00:16:32","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/?p=3841\/"},"modified":"2022-02-28T09:11:19","modified_gmt":"2022-02-28T00:11:19","slug":"process_g_sic_trench","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_sic_trench\/","title":{"rendered":"SiC Trench etching"},"content":{"rendered":"<p>We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.<br \/>5357cc拉斯维加斯游戏官网<\/p>5357cc拉斯维加斯游戏官网<h3>Challenges<\/h3>5357cc拉斯维加斯游戏官网<h4><b>Control Trench shape<\/b><\/h4>5357cc拉斯维加斯游戏官网<p>Round shape is required at the bottom of the trench structure to avoid electrolytic concentration in high pressure resistance applications<\/p>5357cc拉斯维加斯游戏官网<h4><b>Low etching rate<\/b><\/h4>5357cc拉斯维加斯游戏官网<p>Since SiC is a hard and chemically stable material, it is difficult to achieve a high etching rate.<\/p>5357cc拉斯维加斯游戏官网<h4>Selection ratio with SiO2 mask<\/h4>5357cc拉斯维加斯游戏官网<p>Low selectivity with SiO2 mask requires thick SiO2 mask<\/p>5357cc拉斯维加斯游戏官网<p><\/p>5357cc拉斯维加斯游戏官网<h3>Solutions<\/h3>5357cc拉斯维加斯游戏官网<h4>Realization of smooth side walls and round shape<\/h4>5357cc拉斯维加斯游戏官网<p>Optimize etching conditions to control trench shape<\/p>5357cc拉斯维加斯游戏官网<h4><b>Etching rate is more than 700nm\/min<\/b><\/h4>5357cc拉斯维加斯游戏官网<h4><b>High selectivity ratio<\/b><\/h4>5357cc拉斯维加斯游戏官网<p>A process that achieves both side wall smoothness and high selectivity<\/p>5357cc拉斯维加斯游戏官网<table>5357cc拉斯维加斯游戏官网<tbody>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/04\/SiC-trench.png\" rel=\"lightbox-0\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-3202 size-medium\" src=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/04\/SiC-trench-300x240.png\" alt=\"\" width=\"300\" height=\"240\" \ alt="5357cc拉斯维加斯游戏官网" /><\/a><\/td>5357cc拉斯维加斯游戏官网<td>5357cc拉斯维加斯游戏官网<table width=\"472\">5357cc拉斯维加斯游戏官网<tbody>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td width=\"161\">material<\/td>5357cc拉斯维加斯游戏官网<td width=\"312\">SiC<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td width=\"161\">mask<\/td>5357cc拉斯维加斯游戏官网<td width=\"312\">SiO2<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td width=\"161\">size<\/td>5357cc拉斯维加斯游戏官网<td width=\"312\">W 1um, D 2.1um<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td width=\"161\">ER<\/td>5357cc拉斯维加斯游戏官网<td width=\"312\">700nm\/min<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<tr>5357cc拉斯维加斯游戏官网<td width=\"161\">Selectivity<\/td>5357cc拉斯维加斯游戏官网<td width=\"312\">\uff1e8.0<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<\/tbody>5357cc拉斯维加斯游戏官网<\/table>5357cc拉斯维加斯游戏官网<\/td>5357cc拉斯维加斯游戏官网<\/tr>5357cc拉斯维加斯游戏官网<\/tbody>5357cc拉斯维加斯游戏官网<\/table>5357cc拉斯维加斯游戏官网<p><\/p>5357cc拉斯维加斯游戏官网<h4 class=\"mod-title-h1 mod-title-h1--center mgb-pc--50 mgb-sp--55\" style=\"text-align: center;\"><strong>Contact Us<\/strong><\/h4>5357cc拉斯维加斯游戏官网<h4 style=\"text-align: center;\"><strong><a target=\"_blank\" href=\"https:\/\/www.ulvac.co.jp\/en\/contact\/elec_inquiry\/index.html\" rel=\"noopener\">https:\/\/www.ulvac.co.jp\/en\/contact\/elec_inquiry\/<\/a><\/strong><\/h4>5357cc拉斯维加斯游戏官网<h4 style=\"text-align: center;\">Dry Etching system<\/h4>5357cc拉斯维加斯游戏官网<h4 style=\"text-align: center;\"><a target=\"_blank\" href=\"https:\/\/www.ulvac.co.jp\/en\/products\/etching_system\/_ne-5700ne-7800\/index.html\" rel=\"noopener\">https:\/\/www.ulvac.co.jp\/en\/products\/etching_system\/<\/a><\/h4>5357cc拉斯维加斯游戏官网","protected":false},"excerpt":{"rendered":"<p>We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.<\/p>\n","protected":false},"author":17,"featured_media":3202,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[74],"tags":[],"class_list":["post-3841","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-power-device"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3841"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=3841"}],"version-history":[{"count":2,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3841\/revisions"}],"predecessor-version":[{"id":4823,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3841\/revisions\/4823"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media\/3202"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=3841"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=3841"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=3841"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}