{"id":3843,"date":"2021-01-27T09:21:22","date_gmt":"2021-01-27T00:21:22","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/?p=3843\/"},"modified":"2022-02-28T09:10:39","modified_gmt":"2022-02-28T00:10:39","slug":"process_g_gan_trench","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_gan_trench\/","title":{"rendered":"GaN Trench etching"},"content":{"rendered":"
We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.
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The bottom is rounded to prevent device destruction due to concentration of electrolysis on the corners of the bottom.<\/p>拉斯维加斯网址9888官方网站
Damage to the surface affects device performance<\/p>拉斯维加斯网址9888官方网站
<\/p>拉斯维加斯网址9888官方网站
Optimize etching conditions to control trench shape<\/p>拉斯维加斯网址9888官方网站
The damaged layer formed by trench formation is removed by ultra-low speed etching and low temperature annealing.<\/p>拉斯维加斯网址9888官方网站