Less damage as much as possible<\/strong><\/p>\n Selective etching<\/strong><\/p>\n <\/p>\n Forming recess structure<\/strong><\/p>\n Very low rate etching leaves a small amount of AlGaN. (Example of leaving 5 nm by 25 nm etching)<\/p>\n Forming P-type GaN layer<\/strong><\/p>\n Etching p-GaN only, leaving AlGaN<\/p>\n Forming AlN spacer<\/strong><\/p>\n Deposition 1 \uff5e 1.5nm AlN, etching AlGaN<\/p>\n <\/p>\n There are several gate structure patterns in GaN HEMTs, but all of them require very shallow machining.<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[76],"tags":[],"class_list":["post-3855","post","type-post","status-publish","format-standard","hentry","category-gan-hemt"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3855"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=3855"}],"version-history":[{"count":3,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3855\/revisions"}],"predecessor-version":[{"id":4807,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3855\/revisions\/4807"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=3855"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=3855"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=3855"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}Solution<\/h3>\n
<\/a>拉斯维加斯3499网站登录<\/div><\/figure><\/a>拉斯维加斯3499网站登录<\/div>拉斯维加斯3499网站登录\t<\/a>拉斯维加斯3499网站登录<\/div><\/figure><\/a>拉斯维加斯3499网站登录<\/div><\/figure>\n\t\t<\/div>\n\n<\/a>拉斯维加斯3499网站登录<\/div><\/figure><\/a>拉斯维加斯3499网站登录<\/div><\/figure>\n\t\t<\/div>\n\nContact Us<\/strong><\/h4>\n
https:\/\/www.ulvac.co.jp\/en\/contact\/elec_inquiry\/<\/a><\/strong><\/h4>\n
GaN HEMT fabrication flow<\/h4>\n
https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_gan_hemt\/<\/a><\/h4>\n","protected":false},"excerpt":{"rendered":"