{"id":3857,"date":"2021-02-11T11:09:43","date_gmt":"2021-02-11T02:09:43","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/?p=3857\/"},"modified":"2022-02-22T09:21:06","modified_gmt":"2022-02-22T00:21:06","slug":"process-technology-for-gan-hemt","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process-technology-for-gan-hemt\/","title":{"rendered":"Process Technology for GaN HEMT"},"content":{"rendered":"

Patterning SiN isolation film<\/h3>5357cc拉斯维加斯游戏官网

Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by detecting the end point.
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Etching S\/D\uff08Metal)<\/h3>5357cc拉斯维加斯游戏官网

ULVAC can provide both processes of electrode film sputtering and electrode formation etching.<\/p>5357cc拉斯维加斯游戏官网

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Forming VIA\uff08Si or SiC)<\/h3>5357cc拉斯维加斯游戏官网

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ULVAC can achieve high adhesion by consistently performing Degas \u27a1 oxide film removal etching \u27a1 seed layer film formation.<\/p>5357cc拉斯维加斯游戏官网

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GaN HEMT fabrication flow<\/h4>5357cc拉斯维加斯游戏官网

https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_gan_hemt\/<\/a><\/h4>5357cc拉斯维加斯游戏官网","protected":false},"excerpt":{"rendered":"

Patterning SiN isolation film Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by detecting the end point.<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[76],"tags":[],"class_list":["post-3857","post","type-post","status-publish","format-standard","hentry","category-gan-hemt"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3857"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=3857"}],"version-history":[{"count":4,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3857\/revisions"}],"predecessor-version":[{"id":4806,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3857\/revisions\/4806"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=3857"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=3857"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=3857"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}