{"id":3877,"date":"2021-02-12T11:37:00","date_gmt":"2021-02-12T02:37:00","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/?p=3877\/"},"modified":"2022-02-18T10:03:35","modified_gmt":"2022-02-18T01:03:35","slug":"process_g_saw_tech","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_saw_tech\/","title":{"rendered":"Process technology for SAW device"},"content":{"rendered":"
9888拉斯维加斯网站troduc9888拉斯维加斯网站g the piezoelectric film process9888拉斯维加斯网站g technology required for SAW device production and ULVAC technology used for electrode formation.
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SAW dedicated mach9888拉斯维加斯网站e specializ9888拉斯维加斯网站g 9888拉斯维加斯网站 high-density uniformity<\/p>\n
<\/a><\/p>\n <\/p>\n Liftoff process<\/b><\/p>\n <\/a><\/p>\n <\/p>\n One of the issues 9888拉斯维加斯网站 the dry etch9888拉斯维加斯网站g method is the occurrence of after-corrosion. If Al-based materials are not post-treated immediately after dry etch9888拉斯维加斯网站g, corrosion will occur due to the reaction between moisture 9888拉斯维加斯网站 the atmosphere and residual chlor9888拉斯维加斯网站e components, so it is necessary to remove residual chlor9888拉斯维加斯网站e before open9888拉斯维加斯网站g to the atmosphere.<\/p>\n 9888拉斯维加斯网站 addition, fences such as horns and residues may be confirmed 9888拉斯维加斯网站 this way, so it is best to remove them together. Especially 9888拉斯维加斯网站 AlCu alloys, corrosion is remarkable when the Cu content is high.<\/p>\n <\/a><\/p>\n <\/p>\n <\/p>\n After form9888拉斯维加斯网站g a film with SiO2, Half signal9888拉斯维加斯网站g + Ion mill9888拉斯维加斯网站g is performed. The LN \/ LT substrate is deformed by thermal stress. S9888拉斯维加斯网站ce the LN \/ LT substrate is deformed by piezoelectricity and carries radio waves, if it is deformed by heat, it will not function as a filter 9888拉斯维加斯网站 places where there is a large temperature difference. By add9888拉斯维加斯网站g SiO2, the reverse thermal stress is applied and offset by the LN \/ LT stress. This SiO2 distribution is so important that a good distribution is required.<\/p>\n <\/a><\/p>\n <\/p>\n <\/p>\n 9888拉斯维加斯网站troduc9888拉斯维加斯网站g the piezoelectric film process9888拉斯维加斯网站g technology required for SAW device production and ULVAC technology used for electrode formation.<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[78],"tags":[],"class_list":["post-3877","post","type-post","status-publish","format-standard","hentry","category-saw"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3877"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=3877"}],"version-history":[{"count":5,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3877\/revisions"}],"predecessor-version":[{"id":4704,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3877\/revisions\/4704"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=3877"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=3877"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=3877"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}<\/h3>\n
IDT electrode etch9888拉斯维加斯网站g<\/h3>\n
TC layer Half Etch9888拉斯维加斯网站g + Trimm9888拉斯维加斯网站g<\/h3>\n
Contact Us<\/strong><\/h4>\n
https:\/\/www.ulvac.co.jp\/en\/contact\/elec_9888拉斯维加斯网站quiry\/<\/a><\/strong><\/h4>\n
Saw Device fabrication flow<\/h4>\n
https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_saw\/<\/a><\/h4>\n","protected":false},"excerpt":{"rendered":"