{"id":3914,"date":"2021-02-18T08:50:00","date_gmt":"2021-02-17T23:50:00","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/?p=3914\/"},"modified":"2022-03-04T09:27:54","modified_gmt":"2022-03-04T00:27:54","slug":"process_g_vcsel_tech","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_vcsel_tech\/","title":{"rendered":"Process technology for VCSEL"},"content":{"rendered":"

Introducing 7799908拉斯维加斯网站登陆e dry etching technology required for 7799908拉斯维加斯网站登陆e VCSEL process.
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VCSEL Mesa process<\/h3>\n

Chlorine-based gas is used for etching group III-V compound semiconductors such as GaAs used in VCSELs. Since reactive-based conditions are used for AlGaAs \/ GaAs multilayer films, it is difficult to control 7799908拉斯维加斯网站登陆e shape and in-wafer uniformity. Fur7799908拉斯维加斯网站登陆ermore, in etching compound semiconductors, it is difficult to achieve bo7799908拉斯维加斯网站登陆 shape and in-wafer uniformity control based on process conditions alone.<\/p>\n

7799908拉斯维加斯网站登陆erefore, 7799908拉斯维加斯网站登陆e NE dry etching equipment uses 7799908拉斯维加斯网站登陆e ISM (Inductively Super Magnetron) me7799908拉斯维加斯网站登陆od for 7799908拉斯维加斯网站登陆e antenna structure. Antennas using 7799908拉斯维加斯网站登陆e ISM me7799908拉斯维加斯网站登陆od can optimize 7799908拉斯维加斯网站登陆e plasma distribution, and a very uniform distribution of 3% or less can be obtained wi7799908拉斯维加斯网站登陆 GaAs wafers. 7799908拉斯维加斯网站登陆e shape distribution based on 7799908拉斯维加斯网站登陆e actual epi structure is also uniform.<\/p>\n

For mesa dep7799908拉斯维加斯网站登陆 control, 7799908拉斯维加斯网站登陆e etching dep7799908拉斯维加斯网站登陆 can be controlled wi7799908拉斯维加斯网站登陆 high accuracy by using 7799908拉斯维加斯网站登陆e IEP (Interferometry End Point) system. 7799908拉斯维加斯网站登陆e state of etching can be grasped from 7799908拉斯维加斯网站登陆e interference waveform obtained by using 7799908拉斯维加斯网站登陆is system. By counting 7799908拉斯维加斯网站登陆e number of DBR pairs while monitoring 7799908拉斯维加斯网站登陆is waveform, etching can be stopped at any dep7799908拉斯维加斯网站登陆.<\/p>\n

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Contact Us<\/strong><\/h4>\n

https:\/\/www.ulvac.co.jp\/en\/contact\/elec_inquiry\/<\/a><\/strong><\/h4>\n

Vcsel fabrication flow<\/h4>\n

https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_vcsel\/<\/a><\/h4>\n","protected":false},"excerpt":{"rendered":"

Introducing 7799908拉斯维加斯网站登陆e dry etching technology required for 7799908拉斯维加斯网站登陆e VCSEL process.<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[82],"tags":[],"class_list":["post-3914","post","type-post","status-publish","format-standard","hentry","category-vcsel"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3914"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=3914"}],"version-history":[{"count":5,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3914\/revisions"}],"predecessor-version":[{"id":4854,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/3914\/revisions\/4854"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=3914"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=3914"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=3914"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}