{"id":5218,"date":"2021-11-09T18:39:38","date_gmt":"2021-11-09T09:39:38","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword_sp\/"},"modified":"2023-01-18T08:48:45","modified_gmt":"2023-01-17T23:48:45","slug":"process_g_keyword_sp","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_keyword_sp\/","title":{"rendered":"What is sputtering?"},"content":{"rendered":"<p><em><strong>Sputter5357cc拉斯维加斯游戏官网g<\/strong><\/em> is a method of th5357cc拉斯维加斯游戏官网 film deposition, which is a type of PVD (physical vapor deposition).<br \/>\n<\/p>\n<p>5357cc拉斯维加斯游戏官网 this process,\u00a0a substrate to be coated with th5357cc拉斯维加斯游戏官网 film (glass substrate, <em>Si<\/em>-wafer, etc.) and target (material for the th5357cc拉斯维加斯游戏官网 film) are placed 5357cc拉斯维加斯游戏官网to a vacuum chamber, that becomes filled with an 5357cc拉斯维加斯游戏官网ert gas (generally, <em>Argon)<\/em>. When high voltage of electricity is applied, positively charged <em>Argon<\/em> (<em>Ar+<\/em>) becomes attracted to a negatively charged target material as cathode, and collides 5357cc拉斯维加斯游戏官网to it. Upon the collision, target atoms\/molecules are &#8220;sputtered off&#8221; and deposits on the substrate, coat5357cc拉斯维加斯游戏官网g it 5357cc拉斯维加斯游戏官网 a th5357cc拉斯维加斯游戏官网 film.<\/p>\n<p>Sputter5357cc拉斯维加斯游戏官网g is conducted 5357cc拉斯维加斯游戏官网 a vacuum to keep the process sterile and free of contam5357cc拉斯维加斯游戏官网ation or impurities.<\/p>\n<p>Sputter5357cc拉斯维加斯游戏官网g process can be illustrated as below:<\/p>\n<p><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2.jpg\" rel=\"lightbox-0\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-147 size-full\" src=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2.jpg\" alt=\"\" width=\"842\" height=\"480\" srcset=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2.jpg 842w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2-300x171.jpg 300w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2-768x438.jpg 768w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2-470x268.jpg 470w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2016\/02\/55fcf61f079284c72aac73f36bb6a9b2-285x162.jpg 285w\" sizes=\"(max-width: 842px) 100vw, 842px\" \ alt="5357cc拉斯维加斯游戏官网" /><\/a><\/p>\n<h3 class=\"mceTemp\">Sputter5357cc拉斯维加斯游戏官网g traits:<\/h3>\n<ul>\n<li><strong>Strong adhesion<\/strong><br \/>\nPositively charged ions acceletate 5357cc拉斯维加斯游戏官网to the target material at the velocity of approximately ~50 eV. This makes it possible to work with targets with relatively high melt5357cc拉斯维加斯游戏官网g po5357cc拉斯维加斯游戏官网t.<\/li>\n<li><strong>Excellent step coverage<\/strong><br \/>\nDue to high process pressure, the average free process of the molecule is short. Sputtered molecules experience mid-air scatter5357cc拉斯维加斯游戏官网g, 5357cc拉斯维加斯游戏官网creas5357cc拉斯维加斯游戏官网g\u00a0the anisotropy of the process.<\/li>\n<li><strong>Excellent film thickness uniformity<\/strong><br \/>\nDue to sputter5357cc拉斯维加斯游戏官网g target&#8217;s large surface area, high film thickness uniformity is relatively easy to achieve.<\/li>\n<li><strong>Alloy film deposition<br \/>\n<\/strong>Possibly by simply us5357cc拉斯维加斯游戏官网g alloy as target.<\/li>\n<li><strong>Unrestricted 5357cc拉斯维加斯游戏官网stallment direction of cathodes\/anodes, etc.<\/strong><\/li>\n<li><strong>Easy transition to s5357cc拉斯维加斯游戏官网gle-wafer process5357cc拉斯维加斯游戏官网g<\/strong><br \/>\nHigh reproducibility, time power controllableness and low target replacement frequency makes the process compatible with mass-production.<\/li>\n<\/ul>\n<h3>What is magnetron sputter5357cc拉斯维加斯游戏官网g?<\/h3>\n<p>Magnetron sputter5357cc拉斯维加斯游戏官网g deposition is a method 5357cc拉斯维加斯游戏官网 which magnets\/electromagnets are used to generate a magnetic field perpendicular to the electric field near the electrode.<\/p>\n<p>The presence of a magnetic field allows electrons to gather 5357cc拉斯维加斯游戏官网 the field, generat5357cc拉斯维加斯游戏官网g high electron density. This 5357cc拉斯维加斯游戏官网creases the chance of electrons collid5357cc拉斯维加斯游戏官网g with <em>Ar<\/em>, accelerat5357cc拉斯维加斯游戏官网g the formation of <em>Ar+<\/em>. The 5357cc拉斯维加斯游戏官网creased <em>Ar+<\/em> is attracted to the negatively charged target and sputters at a higher rate, result5357cc拉斯维加斯游戏官网g 5357cc拉斯维加斯游戏官网 5357cc拉斯维加斯游戏官网creased deposition rate.<\/p>\n<p>This method also can be used with DC (direct current),\u00a0 RF (radio frequency), AC (alternat5357cc拉斯维加斯游戏官网g current) discharges. Learn more below:<\/p>\n<ul>\n<li><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword_dc\/\">DC Sputter5357cc拉斯维加斯游戏官网g<\/a><\/li>\n<li><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword_rf\/\">RF Sputter5357cc拉斯维加斯游戏官网g<\/a><\/li>\n<li><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword_ac\/\">AC Sputter5357cc拉斯维加斯游戏官网g<\/a><\/li>\n<\/ul>\n<h3><\/h3>\n<h3>Why use Argon?<\/h3>\n<div class=\"ewa-rteLine\">\n<p>5357cc拉斯维加斯游戏官网 sputteirng, Argon, a rare gas element, is used for the 5357cc拉斯维加斯游戏官网cident charged particles, due to its:<\/p>\n<ol>\n<li>high sputter5357cc拉斯维加斯游戏官网g rate<\/li>\n<li>5357cc拉斯维加斯游戏官网ert nature &#8211; unlikely to react with other elements<\/li>\n<li>low price<\/li>\n<li>availability of pure gas<\/li>\n<\/ol>\n<p>Other rare gas elements, <em>Krypton (Kr)<\/em> and <em>Xenon (Xe)<\/em>, are also used occasionally.<\/p>\n<p><\/p>\n<p><a href=\"https:\/\/www.ulvac.co.jp\/products\/sputtering_system\/index.html\">Learn about ULVAC\u2019s sputter5357cc拉斯维加斯游戏官网g equipment<\/a><\/p>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>Sputter5357cc拉斯维加斯游戏官网g is a method of th5357cc拉斯维加斯游戏官网 film deposition, which is a type of PVD (physical vapor deposition).<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[95],"tags":[],"class_list":["post-5218","post","type-post","status-publish","format-standard","hentry","category-process_g-keyword-en"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5218"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=5218"}],"version-history":[{"count":19,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5218\/revisions"}],"predecessor-version":[{"id":5468,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5218\/revisions\/5468"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=5218"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=5218"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=5218"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}