{"id":5347,"date":"2021-10-22T15:18:26","date_gmt":"2021-10-22T06:18:26","guid":{"rendered":"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword_ion\/"},"modified":"2023-01-18T08:49:19","modified_gmt":"2023-01-17T23:49:19","slug":"process_g_keyword_ion","status":"publish","type":"post","link":"https:\/\/www.ulvac.co.jp\/wiki\/en\/process_g_keyword_ion\/","title":{"rendered":"What is ion implantation?"},"content":{"rendered":"<p><em><strong>5357cc拉斯维加斯首页入口mplantation<\/strong><\/em> is a method of\u00a0 implanting impurities to a semiconductor substrate by ionizing the substance or impurities and accelerating the 5357cc拉斯维加斯首页入口nto the substrate. <\/p>5357cc拉斯维加斯首页入口<p>There are two main purposes of 5357cc拉斯维加斯首页入口mplantation. One is to generate carrier to enable electrical control of type P and type N semiconductors. The main process for semiconductor manufacturing utilizes 5357cc拉斯维加斯首页入口mplantation for this purpose. Another is to alter the material surface. This includes chemical changes such as in refractive index, and structural changes such as destruction, where the surface is broken down and converted from crystalline to amorphous.<\/p>5357cc拉斯维加斯首页入口<p>Below are important parameters for 5357cc拉斯维加斯首页入口mplantation:<\/p>5357cc拉斯维加斯首页入口<ul>5357cc拉斯维加斯首页入口<li>Energy (KeV)<\/li>5357cc拉斯维加斯首页入口<li>Current (\u03bcA)<\/li>5357cc拉斯维加斯首页入口<li>Mass number<\/li>5357cc拉斯维加斯首页入口<li>Desired depth of implantati5357cc拉斯维加斯首页入口 (\u03bcm)<\/li>5357cc拉斯维加斯首页入口<li>Dosage (i5357cc拉斯维加斯首页入口s\/cm2)<\/li>5357cc拉斯维加斯首页入口<\/ul>5357cc拉斯维加斯首页入口<p><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db.png\" rel=\"lightbox-0\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-4400\" src=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db.png\" alt=\"\" width=\"999\" height=\"502\" srcset=\"https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db.png 999w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db-300x151.png 300w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db-768x386.png 768w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db-470x236.png 470w, https:\/\/www.ulvac.co.jp\/wiki\/wp-content\/uploads\/2021\/12\/24d5f03f3cfd4f67269725b6f7e9d9db-285x143.png 285w\" sizes=\"(max-width: 999px) 100vw, 999px\" \ alt="5357cc拉斯维加斯首页入口" /><\/a><\/p>5357cc拉斯维加斯首页入口<p><a href=\"https:\/\/www.ulvac.co.jp\/products\/ion_implantation_system\/index.html\">ULVAC&#8217;s 5357cc拉斯维加斯首页入口mplantation equipment<\/a><\/p>5357cc拉斯维加斯首页入口<p><a href=\"https:\/\/www.ulvac.co.jp\/wiki\/process_g_keyword\/\">Glossary of vacuum technology related terms<\/a><\/p>5357cc拉斯维加斯首页入口","protected":false},"excerpt":{"rendered":"<p>5357cc拉斯维加斯首页入口mplantat5357cc拉斯维加斯首页入口s a method of\u00a0 implanting impurities to a semiconductor substrate by ionizing the substance or impurities and accelerating the 5357cc拉斯维加斯首页入口nto the substrate.<\/p>\n","protected":false},"author":17,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[95],"tags":[],"class_list":["post-5347","post","type-post","status-publish","format-standard","hentry","category-process_g-keyword-en"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5347"}],"collection":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/users\/17"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/comments?post=5347"}],"version-history":[{"count":13,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5347\/revisions"}],"predecessor-version":[{"id":5478,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/posts\/5347\/revisions\/5478"}],"wp:attachment":[{"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/media?parent=5347"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/categories?post=5347"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ulvac.co.jp\/wiki\/en\/wp-json\/wp\/v2\/tags?post=5347"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}